Abstract
In this paper, it utilizes co-sputtering method to deposit MGZO transparent conductive thin film on a corning glass substrate. Furthermore, it also investigated the effect of annealing temperature on the optoelectrical properties and surface structural of MGZO transparent conductive film. The results show MGZO transparent conductive film can obtain the lowest resistivity of 7.57 × 10−3 Ω-cm on the sputtering power 90 W, 4 mtorr bias and at the annealing temperature of 300 °C. Furthermore, the best transmittance is 81% at the annealing temperature of 300 °C. Finally, the grain size also increases with increasing annealing temperature.
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