Abstract
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact properties. Optimum barrier height of 1.13 eV and ideality factor of 1.04 was obtained in contacts deposited at 200 oC and annealed for 60 hours. Under a reverse voltage bias of 400 V, the average leakage current on these set of diodes was 6.6 x 10-8 A. Based on the x-ray diffraction analysis, TiC, Ti5Si3 and Ti3SiC2 were formed at the Ti/SiC interface. These results could be beneficial to improving the performance of 4H-SiC Schottky diodes for high power and high temperature applications.
Highlights
A large number of electronics essential to our everyday life such as remote actuators, distributed high power control systems, avionics, automotive and geophysical electronic systems require functionality at high temperatures
These benefits are extensible to the metal semiconductor field effect transistors (MESFETs) which employ Schottky contacts and which are attractive for microwave circuits, power amplifiers, and wireless communications.[2]
We investigated the effect of Ti Schottky contact deposition temperature on the Ti/silicon carbide (SiC) Schottky barrier diodes, which, as far as we know, has not yet been conducted
Summary
A large number of electronics essential to our everyday life such as remote actuators, distributed high power control systems, avionics, automotive and geophysical electronic systems require functionality at high temperatures. Schottky barrier diodes are widely used in power supply circuits, mixers, detectors, sensors and other high frequency applications on account of their low conduction loss and close to zero reverse recovery time when compared with p-n junction diodes. These benefits are extensible to the metal semiconductor field effect transistors (MESFETs) which employ Schottky contacts and which are attractive for microwave circuits, power amplifiers, and wireless communications.[2]. Forward voltage to minimize conduction loss, enhance switching speed and generally improve the efficiency of the system during the “on” state This implies that a low value of V F is achieved by a combination of low barrier height and small on-resistance.
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