Abstract
A high contact resistance for screen-printed contacts was observed when a conventional Ag paste was used on a boron emitter. The results of this study suggest that electron injection during firing is one of the processes that contribute to a lower contact resistance. Larger quantities of Ag precipitates formed upon electron injection into the boron emitter, which was confirmed by observing Ag crystallite or dendrite structures on the boron and by measuring the contact resistance between the boron emitter and the Ag bulk. The electron-injected sample had approximately 10000 times lower contact resistance than an untreated sample. The contact resistance of the electron-injected sample was 0.021 mΩ∙cm2 under optimal conditions, which is lower than that of conventional p-type silicon solar cells. Thus, electron injection can effectively lower contact resistance when using Ag paste in n-type silicon solar cells. During the cooling in the firing process, dissolved Ag ions in the glass layer are formed as dendrites or crystallites/particles. The dendrites are formed earlier than others via electrochemical migration under electron injection conditions. Then, crystallites and particles are formed via a silicon etching reaction. Thus, Ag ions that are not formed as dendrites will form as crystallites or particles.
Highlights
Participate in the Ag ion reduction reaction
This study investigated the use of conventional Ag paste in n-type silicon solar cells
Its edge was etched with the acid mixture, and Ag paste was deposited onto the boron emitter while aluminum was deposited onto the opposite side
Summary
Participate in the Ag ion reduction reaction. Charged Ag ions etch the silicon less strongly in boron emitters than in phosphorus emitters. This study investigated the use of conventional Ag paste in n-type silicon solar cells. We injected electrons into the boron emitter to increase the number of electrons at the boron emitter surface during the firing process. The nano- or micro-structure of Ag and its contact behavior were investigated using field emission scanning electron microscopy (FE-SEM) and the transfer length method
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