Abstract
Highly non-uniform electric field exists in the active region of quantum intersubband devices, primarily due to the presence of PN junctions forming between heavily doped contact regions and non-intentionally doped barriers. Using a combination of experiments and theoretical simulations, we investigate the effect of this non-uniform internal electric field on the photodetector operation. Three quantum dots-in-a-well (DWELL) photodetectors have been fabricated with top spacer, bottom spacer, and no spacer around the active region, respectively, to demonstrate the effect of the non-uniform field. Drift-diffusion based calculations of the electric field provide further insight into the device operation.
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