Abstract
In this work, chemical vapor-deposited carbon-doped oxide (CDO) films using tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied. Process parameters studied include low frequency RF (LFRF) power, pressure, and CO 2/O 2 flow rates as the oxidation influencing agents. Numerous properties of the films are studied include dielectric constant ( k), breakdown voltage, leakage current, stresses, hardness, modulus, refractive indices, and chemical bonding. Reliability of the films was studied using the autoclave test. Results indicated that reduction of LFRF power, CO 2/O 2 flow rates, and increase in pressure, reduces the dielectric constant. It is found that O 2 has a stronger oxidation effect compared to CO 2 gas. It was observed that the CO 2–O 2 process was able to lower the k value and impart higher hardness and modulus compared with a pure CO 2 process
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