Abstract
In this work, we have investigated the effect of atomic H irradiation on the thin-film growth of GaNAs and GaInNAs by RF-molecular beam epitaxy from the viewpoint of growth dynamics and crystal quality. The crystal quality of Ga(In)NAs was mainly characterized by X-ray diffraction and the surface morphology was characterized by using atomic force microscope. The atomic H irradiation during the growth of GaNAs and GaInNAs in RF-molecular beam epitaxy was found to be effective in improving the overall quality of these epilayers. Further, it was found that atomic H irradiation has an effect of suppressing the three-dimensional growth thereby promoting a two-dimensional growth as well as is effective in passivating the defects and suppressing the phase separation. These results should bring further improvements of novel structures that require abrupt interfaces in GaNAs and GaInNAs based devices.
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