Abstract
The effects of annealing temperature on excitonic emissions from Na+ ion implanted ZnO nanorods are studied and annealing between 600 and 800°C can effectively repair the implantation as evidenced by the enhanced excitonic emissions. A well-resolved bound exciton line at 3.352eV with a linewidth of ∼2meV emerges from 800°C annealed sample and could be related to the formation of NaZn acceptor. When the annealing temperature is increased, the intensity of the I6−8 line decreases while that of I3 increases, suggesting enhanced ionization of neutral donors at elevated temperature.
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