Abstract
Abstract This paper reports the effects on the optical and electrical properties of indium tin zinc oxide (ITZO) films by annealing and hydrogen plasma treatment. ITZO films were prepared by spin-coating using ITZO nanoink. The sheet resistance of the spin-coated ITZO was decreased to 155 Ω/square after annealing at 300 °C. Subsequent inductively-coupled hydrogen plasma decreased the sheet resistance of the ITZO film further to 88 Ω/square due to the formation of a high density of O–H bonds and oxygen vacancies leaving a metal cluster on the surface, which is comparable to that of solution-processed ITO films. Although the transmittance of the hydrogen plasma-treated sample was decreased considerable by the formation of metal clusters, the transmittance and optical band gap could be enhanced without a deteriorating the electrical properties by removing the metal clusters using a H 2 SO 4 solution.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
