Abstract
AbstractThe effects of an iodine source (C2H5I) on ruthenium (Ru) films grown on TiN/Ti/Si wafers by metal–organic (MO)CVD using Ru(EtCp)2 as a precursor were investigated. When an additional step of adsorbing iodine source was inserted during the Ru MOCVD process, the films became smoother and the root mean square (rms) surface roughness of the 30 nm thick Ru film became less than 10 % of the film thickness, as low as 1.71 nm. Moreover, the surface reaction‐limited regime was extended to 400 °C, causing a wide process window.
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