Effective Edge Width for 65-nm pMOSFETs and Their Variations Under CHC Stress

Abstract

The narrow-width W effect of metal-oxide-semiconductor field-effect transistors (MOSFETs) with shallow trench isolation technology has been widely reported. The factor of most concern is the edge width Δw affecting the electrical characteristics of the MOSFETs. In this letter, the negative variation value of Δw, as explained in the content, was derived from 65-nm node p-channel MOSFETs (pMOSFETs). To verify the validity of Δw, the pMOSFETs were stressed by channel-hot-carrier stress conditions. According to the experimental results, the device parameter degradation, i.e., the threshold voltage VTH, was obviously dominated by |Δw|/W, and the degradation of the narrow-width device was also increased for the wide width.