Abstract
IR baking as an approach to effective baking of thick and ultra-thick photoresist layers is reported. An experimental set-up is presented. The resist temperature is pyrometrically determined and is used to control the system. The performance and benefits of IR baking are proved by patterning results. Examples of two positive tone resists, ma-P 100 and ma-P 1275 (Micro Resist Technology GmbH), with layer thicknesses up to 60 μm and the chemically amplified negative tone photoresist SU-8 (MCC) (500 μm) are presented. IR baking enables reduction of process time and temperature. Because of the gentle baking, high aspect ratios can be attained and stress reduction is achieved in SU-8.
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