Abstract
The ab plane Hall resistivity in the vortex state of undoped, Zn=0.6% and 0.98% doped Bi 2Sr 2Ca(Cu 1−x Zn x) 2O 8 has been measured in magnetic field H parallel to the c axis of the crystal. Three Hall sign reversals were observed for Zn=0.6% doped sample with crystal defect. It is expected that the crystal defect in Zn=0.6% doped sample causes the change of the electronic state density at the Fermi level and leads to the third Hall sign reversal in low temperature.
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