Abstract
In this work, the change according to the different voltages (0, 5, 10, 15, 20 and, 25 V) of γ−ray linear attenuation coefficients for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors have been measured by using an extremely narrow collimated-beam transmission method in the energy 59.54 keV. Gamma-rays of 241Am were detected by using a high-resolution Si(Li) detector and, energy dispersive X-ray fluorescence spectrometer (EDXRFS). GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors were grown by the Bridgman-Stockbarger method. There are no cracks or voids on the surface of ingots. Samples were cleaved along the cleavage planes (001). The freshly cleaved crystals have mirror-like surfaces even before using mechanical treatment. Results are presented and discussed in this study.
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