Abstract
Vanadium-doped ZnSe films were epitaxially grown on (100) GaAs substrates by metal-organic vapor phase epitaxy. The crystal structure and the state of vanadium in the ZnSe crystal were investigated using X-ray diffractometry, infrared absorption, and photocurrent. It was revealed that zinc sites in the ZnSe crystal were substituted by vanadium atoms on the basis of the results of infrared absorption which peaked around 2200 nm as a result of the presence of V 2+ , and the photocurrent which peaked at 860 nm as a result of the internal transition between V 2+ and V 3+ . The magnetic properties were measured by using a superconducting quantum interface device at room temperature, and it was found that the magnetization curve of ZnSe was markedly changed by vanadium doping.
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