Abstract
Ferroelectric films of bismuth-containing layered perovskite Sr 0.75Bi 2.35(Ta 2− x Ti x )O 9 ( x=0–0.8) have been prepared using a metal-organic decomposition method. The effects of Ti substitution on the microstructure evolution and ferroelectric properties of Sr 0.75Bi 2.35Ta 2O 9 films were investigated. A maximum remanent polarization of 2 P r=30.7 μC/cm 2 was obtained for the Sr 0.75Bi 2.35Ta 1.8Ti 0.2O 9 film as compared to Sr 0.75Bi 2.35Ta 2O 9 films (19.6 μC/cm 2) annealed at 800 °C in air. The Ti substitution for Ta leads to charge compensation for the self-produced positive Bi Sr due to the occupation of Bi on Sr vacancies and is responsible for the increase in leakage resistance. The leakage current density as low as 2×10 −8 A/cm 2 can be obtained at an applied electric field of 100 kV/cm. Substitution of Ti for Ta shows a positive effect on the fatigue endurance of Sr-deficient Sr 0.75Bi 2.35Ta 2O 9 film.
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