Abstract
We demonstrate an AlGaN/GaN heterojunction bipolar transistor on a substrate grown using the lateral epitaxial overgrowth (LEO) technique. Common emitter characteristics show a current gain of 3. Active layers were grown by plasma-assisted molecular-beam epitaxy on metal–organic chemical-vapor-deposition-grown templates on sapphire. The collector–emitter leakage mechanism in these devices is found to be local punch-through associated with base layer compensation near the dislocations. LEO wing regions (nondislocated) were found to reduce the emitter–collector leakage by four orders of magnitude over adjacent window regions which had a dislocation density of 108 cm−2. Varying the doping profile through the base confirms that the mechanism for leakage is local punch-through due to compensation. This compensation mechanism is consistent with simulations which assume a donor-state line density of 107 cm−1. The implications of the emitter–collector leakage for dc device characterization are also discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
