Abstract
Silicon nanoclusters formation in pulsed laser deposited (PLD) silicon suboxide (SiO X ) films by thermal annealing is reported. The SiO X films are prepared by ablation of silicon target at different oxygen partial pressures. The different deposition conditions are employed to study the effect of oxygen concentration on the size of the nanoclusters. Post deposition thermal annealing of the films leads to the phase separation in silicon suboxide films. Fourier transform infrared spectroscopy, micro-Raman spectroscopy and UV–vis absorption spectroscopy studies were carried out to characterize the formation of silicon nanoclusters in SiO X films.
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