Abstract
Silicon nanowires (SiNWs) become interesting nanostructures for several applications such as electronic, photovoltaic, and maybe in a short future as nanopower source for nanorobotics. There are several experimental methods to form SiNWs. In this study, we use the etching assisted silver method in a HF solution. We investigate the effect of the doping concentration (P and P+ silicon) on the morphological, optical and electronic properties of silicon nanowires prepared at different etching times. We found that the morphological, optical and electronic properties of the formed films depend on the doping level of the used silicon substrate. The total reflectivity of some films reaches 1%. However, a decrease of the measured effective lifetime as a function of the etching time is obtained. Using the light-beam-induced-current (LBIC) profiles measured on a MIS structure fabricated on P and P+-SiNWs, we found that the effective diffusion length is in the range of 100μm for P+-SiNWs, however it is only in the range of 60μm for P-SiNWs. This was attributed to the reflectivity and homogeneity of the formed films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
