Abstract
Recent days, Tunnel FETs are the potential replacement of conventional MOSFET. And, germanium (Ge) is considered to be a good alternative of Si as channel material of TFET to boost the on current. However, the variation in lattice temperature is a crucial issue in device performance as it modulates the band gap narrowing and hence tunneling characteristics of TFETs. In this study, we report on the comparative analysis of temperature variability for Germanium pTFET in Radio frequency domain. Also, the dc characteristics mechanism with Subthreshold Slope (SS) is demonstrated. Our simulation work includes the analysis of RF Figure-of-Merits (FOMs) of Ge-pTFET in terms of total capacitance (C gg ), cutoff frequency (f T ) and intrinsic time delay (τ m ). The results show that high temperature exhibits better RF performance along with negative impact on intrinsic time delay.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
