Abstract
Swift heavy ion (SHI) irradiation is an effective approach to modulate the structure, optical and electrical properties of semiconductors. Herein, we present the influence of 86Kr30+ ions irradiation on optical and electrical properties of p-type transparent oxide semiconductor Ni-doped CuAlO2 films prepared by sol–gel method. The results reveal that Ni-doping inhibits the amorphization of CuAlO2 films during swift heavy ions irradiation and decreases the surface roughness of SHI-irradiated Ni-doped CuAlO2 films. However, SHI-irradiated Ni-doped CuAlO2 films exhibit higher optical transmittance (74%) and lower electrical resistivity (11.5 Ω cm), which corresponds to a decrease of two orders of magnitude due to the generation of a large number of carriers. In addition, SHI-irradiated Ni-doped CuAlO2 film renders photosensitive behavior and a reduced electrical resistivity of 7.4 Ω cm is achieved under UV illumination. The superior optical and electrical properties of SHI-irradiated Ni-doped CuAlO2 films can be ascribed to the thermal spike effect of high-energy ions.
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