Abstract
Bipolar resistive switching (RS) phenomenon without required electroforming has been observed in epitaxial (111)-oriented BaTiO3 (BTO) thin films deposited by PLD technique on conducting Nb-doped substrate of SrTiO3 (NSTO). Negative differential resistance (NDR) is observed at about −5V when the maximum of positive voltage exceeds 7V and the compliance current is more than 1.5mA. And bipolar resistive switching has also been observed. In addition, the resistance of LRS decreases with increasing compliance current or the maximum of positive voltage while that of HRS barely changes, and the resistance of HRS increases with increasing the absolute of maximum of negative voltage while that of LRS scarcely changes. A typical rectifying behavior is observed when the maximum of positive voltage is less than 4V (such as 2V). In this case, the reverse biased current is strongly enhanced under illumination of white-light, and vice versa. The resistance of LRS and HRS can be controlled by the applied voltage or the compliance current. The rectifying behavior can be controlled by the white-light. The transition from rectifying behavior to bipolar resistive switching can be controlled by the applied voltage. The above results were discussed by considering the oxygen vacancies that can trap or release electrons as a trapping layer at the Pt/BTO interface.
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