Abstract
GaP tensile strain compensation (SC) layers were introduced into GaAs solar cells enhanced with a five layer stack of InAs quantum dots (QDs). One sun air mass zero illuminated current-voltage curves show that SC results in improved conversion efficiency and reduced dark current. The strain compensated QD solar cell shows a slight increase in short circuit current compared to a baseline GaAs cell due to sub-GaAs bandgap absorption by the InAs QD. Quantum efficiency and electroluminescence were also measured and provide further insight to the improvements due to SC.
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