Effect of space charge on subnanosecond current cutoff in powerful semiconductor diodes

Abstract

High-density current cutoff in an SOS diode is studied with a physicomathematical model including the space-charge effect. If the depth of the p-n junction exceeds 180 µm, the forward pumping time is less than 60 ns, and the backward pumping time is shorter than 20 ns, the subnanosecond cutoff of current with a density of several kiloamperes per square centimeter takes place. The cutoff mechanism is associated with the origination of three high-field zones at the stage of current cutoff: two zones on the p-side, which expand with a velocity close to the saturation value, and one on the n-side, which expands slowly. Taking the space charge into account reduces the role of avalanche multiplication and, as a consequence, improves the switching properties of the diode. It is found that a set of conditions for the electric circuit parameters that specify the pumping current duration and density and for the dopant profile in the semiconductor must be met for subnanosecond current cutoff to occur. The results are compared with experimental data and a model using a quasi-neutral approximation.