Abstract
SiO 2 aerogel film has a promising property as intermetal dielectrics (IMD) for its low dielectric constant. However, a stable and porous SiO 2 aerogel film was not properly synthesized due to the rapid evaporation of solvent during spin coating even in a solvent saturated atmosphere. So less evaporative solvent, 2-methoxyethanol (2MeEtOH), was introduced and the properties of film were compared with films using conventional solvent, ethanol (EtOH). It was found that gelation was faster with 2MeEtOH than EtOH. Highly porous and three-dimensionally well microstructured SiO 2 aerogel film could be fabricated with 2MeEtOH. The maximum porosity of the films using 2MeEtOH and EtOH was 85 and 71%, respectively. The amount of residual –OR, and –OH groups was smaller in the former. The compositional ratios of Si:O:C in the films were 1:2.1:0.2 for the former and 1:2.4:1.1 for the latter. And corresponded dielectric constants were 1.6 and 2.2, respectively.
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