Abstract
Carbon thin films have been deposited on Si(111) wafers throughthermally evaporated C60 with simultaneous bombardments ofNe+ ions. C60 film can be prepared for Ne+ion energy up to 500 eV, indicating the high stability of thecagelike structure of the C60 molecule. The conversion fromC60 structure into amorphous carbon takes place onincreasing Ne+ ion energies to 700 eV, in which amorphological change from a nodule-like surface to featurelessstructure is observed. With further increase of Ne+ ionenergies from 1 to 5 keV, the surface roughness of theamorphous carbon films is enhanced, while a higher fraction ofsp3 bonding and a larger optical bandgap are obtained atrelatively low Ne+ ion energies. These suggest that theion sputtering is not only responsible for the surfaceroughening but also has significant influence on the bondingstructure in ion-assisted amorphous carbon films.
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