Abstract
ZnO nanorods were electrochemically synthesized using various resistivities of Si substrates. With the increase of Si wafer resistivity from 0.01–0.02 to 110–150 Ω cm, the average diameter of ZnO nanorods increased, while the density of the nanorods decreased. Initial value of the current density increased with a decrease of the Si resistivity, accelerating nucleation and formation of a ZnO nanorods. The saturated current density was increased with a higher Si wafer resistivity, which may be due to an increased surface area of the ZnO layer exposed to the solution, elevating the surface concentration of electrons.
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