Abstract
The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O3/TEOS CVD.
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