Abstract
This is the first report of terahertz (THz) radiation from intrinsic Josephson junction devices made of solid Bi 2 Sr 2 CaCu 2 O 8+δ thin films. It is shown that in situ laser trimming of the current lead structure could activate initially THz inactive devices. The trimming increased inductive reactance and improved RF isolation of intrinsic Josephson junctions. It is considered that the RF isolation is a key component to maintain a cavity resonance within intrinsic Josephson junctions essential to create THz waves from solid Bi-2212 film IJJ devices.
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