Abstract
The effect of an rf-biased electrode on a microwave plasma has been studied experimentally and compared with the results of a theoretical model considering the contribution of the rf sheath oscillation to rf plasma production. Conditions under which the rf electrode does not affect the microwave plasma, or acts only as “rf biasing,” are low voltage applied to the electrode, high microwave plasma density, and low rf driving frequency. These non interacting conditions are also related quantitatively. The theoretical model is found to account fully for the experimental results.
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