Effect of residual stress on RF MEMS switch

Abstract

Studies have been carried out on a RF MEMS shunt switch to analyze the effect of residual stress on its electromechanical characteristics. This paper presents the simulated results as well as theoretically calculated results of a shunt switch due to the presence of residual stress gradient in respect of resonant frequency, pull down voltage and switching characteristics. The effect of introduction of holes in the beam is also studied. The calculated results, corresponding to the switch (without holes) at zero residual stress, of resonant frequency, pull-down voltage and switch on and off time are 28.14 kHz, 28.2 V, 16.35 μsec and 8.6 μsec respectively. Modal analysis of the both the structures (with and without holes) are carried out for different values of residual stress gradients. Modal analysis predicted that higher values of tensile stress gradient are not favorable for switching action. The pull-down voltages and switch on and off times are simulated at different stress gradients. With the increase in compressive stress gradient, the pull-down voltage is found to increase, whereas, switch on and off times is decreased. Corresponding to −20 MPa/μm residual stress gradient, the resonant frequency, pull-down voltage and switch on and off times are found to be 74.5 kHz, 63.5 V, 7.5 μsec and 3.36 μsec respectively. Introduction holes in the structure modified these values to 63.77 kHz, 53.1 V, 8.7 μsec, 3.92 μsec respectively.