Abstract
ABSTRACTThe precipitation of oxygen in silicon can be initiated by both homogeneous and heterogeneous nucleation mechanisms. Homogeneous nucleation has been studied in much greater detail; however, in some cases, superior contaminant gettering has been reported for precipitation processes believed to be based on heterogeneous nucleation. In this study, we use rapid thermal annealing (RTA) to demonstrate conclusively that the nucleation mechanism for one such process is, in fact, heterogeneous. We also investigate the sensitivity of precipitation to slight alterations in thermal process steps. We interpret our results in terms of point-defect-induced changes in the critical radius (Rc) for precipitate growth.
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