Abstract
The effect of a small perturbation such as an irregularity in spatial periodicity in the periodic structure of a distributed feedback semiconductor laser is studied. The threshold condition, which takes into account the presence of this perturbation, is derived with the aid of a linearized one-dimensional solution of the wave equation by the truncated Floquet-Bloch approach. To illustrate the effect of a small random perturbation, variations of mean gain and mean phase parameters, with the coupling parameter τ = (κL) and the perturbation parameter ρ0, are investigated with the aid of approximate expressions obtained by using a truncated MacLaurin series and the first-order stationary Gauss-Markov process. For example, it is shown that when the device is operated in the region of moderate coupling, e.g., 0.1<(κL)<6, the effect of perturbation on the effective gain parameter can be significant. Here, κ and L denote the coupling coefficient and the length of periodic structure, respectively.
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