Abstract
Abstract Pb0.8Sn0.2Te thin films grown by flash evaporation were irradiated with Q—switched Nd: YAG (yttrium aluminium garnet) laser pulses of various energy densities in the range 2–30 mJ cm−2 at a rate of 1 per second. X-ray diffraction and transmission electron microscopy studies were carried out on these films. Improvements in crystallinity and increases in the grain size were observed with increasing energy density of the laser pulses. D.c. conductivity and Hall coefficient studies were made on these films in the temperature range 77–300 K. Increases in Hall coefficient and Hall mobility were observed with increasing energy density of the laser pulses. The defect-limited mobility has been estimated in all the films and the defect density is found to decrease with an increase in energy density of the laser pulses.
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