Abstract
The effects of proton irradiation on the electrical properties of semi-insulating gallium arsenide (GaAs) have been investigated to establish if deleterious effects are observed within the substrate following such carrier removal implants. Proton implantation was performed with doses from 1 × 10 12 to 1 × 10 16 cm −2 at 250 keV at room temperature (RT) and 200 °C. It was found that the SI GaAs does not become appreciably conductive after proton implantation for a dose range of 1 × 10 12–1 × 10 16 cm −2 for implants carried out at either RT or 200 °C and hence the material retains its semi-insulating behavior. Hot implants show better stability and optimization of sheet resistivity values. The temperature dependence of the sheet resistivity was also studied for the as-implanted and annealed samples. The data presented in this work is useful in order to interpret the isolation measurements of devices when the peak of the damage due to protons is placed within the SI GaAs substrate below the active device region.
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