Abstract
Carbon nanowalls (CNWs) have been synthesized by electron-cyclotron resonance chemical vapour deposition (ECR-CVD) method on Si substrates. During deposition, processing gas compositions were varied to improve growth rate and it was found that replacing inflammable H2 by safer and cheaper N2 improves growth rate of CNWs. Energy dispersive x-ray spectroscopy and Fourier transform Infra-red spectroscopy results showed that N2 did not take part in bond formation. Emissive probe diagnostics showed that increasing precursor gas to 90% of total gas mixture increases impinging ions’ energy by 3.5 times leading to deposition of vertically oriented CNWs on Si substrate.
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