Abstract
We use a plan‐view transmission electron microscope technique to unambiguously image the “physical” interface position between Si and furnace grown layers. The effect of postoxidation annealing on the interface roughness of was studied with this technique. While no obvious effect due to postoxidation annealing on roughness was observed for silicon (111) a postoxidation annealing at 900°C dramatically removed roughness at interfaces. A model was developed to explain our experimental results based on the idea of kinetic smoothening and oxidation induced roughening. Qualitative agreement has been reached. © 1999 The Electrochemical Society. All rights reserved.
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