Abstract
Fluorine doped silicon dioxide (SiOF) films have a low dielectric constant. Unfortunately, the drawback of regarding SiOF is its low resistance to moisture which causes the increment of dielectric constant with time. Also, fluorine desorption of SiOF film during the postmetallization process causes degradation of metal interconnections. In this study, oxygen postplasma treatments are applied to as-deposited SiOF films for improving their dielectric properties and thermal stabilities. It has been observed that the postplasma treatment of SiOF films is quite an efficient method for blocking moisture and for the stabilization of the dielectric constant. Furthermore, the O2 postplasma treatment of Cu/W–N/SiOF/Si stacks by suppressing interdiffusion improved the thermal stability between SiOF and metal interconnections.
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