Abstract
In this study, the effect of position-dependent effective mass (PDM) on the nonlinear optical properties in a GaAs/AlAs semiconductor quantum well (QW) are intensively studied. Calculations are performed using both the position-dependent effective mass and a constant effective mass within the framework of the compact-density-matrix approach, iterative method, and coordinate transformation method. We have calculated the third-harmonic generation (THG) coefficients, the optical absorption (OA) coefficients and the refractive index changes (RIC) as a function of the incident photon frequency and obtained the energy eigenvalues and eigenfunctions of the system through solving the Schrödinger equation. The results show that spatially varying electron effective mass has a significant impact on the nonlinear optical properties in a quantum well.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
