Abstract
The hydride method was used to study the InP deposition process on (100) InP wafers. The surface state obtained during substrate heating as well as the growth rate appeared to depend on phosphine decomposition. Two regimes of growth were determined. In both regimes, the behavior of the growth rate indicates a deposition process limited to the chlorine desorption by H 2 as in GaAs growth by the chloride method. Surface adsorption of P 2 molecules accounts for the difference between the two regimes. A model of phosphine decomposition was developed to predict this effect regardless of experimental conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
