Abstract
The results of electrical and photoelectrical characterization of the interface and bulk properties of n+-ZnO/n-Si and poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/n+-ZnO/n-Si heterostructures are presented. It was found that the PEDOT:PSS layer deposited on the surface of zinc oxide increases the potential barrier at the ZnO/Si interface, leading to higher band bending in the silicon, which is important for solar cell applications. The recombination rate at the interface decreases because of the creation of an inversion layer in the silicon under operational conditions. The increase of the potential barrier in PEDOT:PSS/n+-ZnO/n-Si heterostructures results in the increase of the open-circuit voltage by 54–180%. The external quantum efficiency in PEDOT:PSS/n+-ZnO/n-Si heterostructures increases by 100% at 450 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
