Abstract
The effect of wet/dry deposition methods and wet/dry cleaning methods on particle removal efficiency (PRE) was investigated. PRE strongly is strongly dependent on particle deposition and removal methods. IPA deposition method was easier to remove silica and PSL particles than DI deposition method when a dry cleaning, a laser shock wave cleaning was applied. DI water deposited PSL particles on both oxide and silicon nitride wafers are much easier to remove than IPA deposited particles in wet cleaning by DI water. However, PRE of silica particles did not show dependency on deposition methods.
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