Effect of Parameters of Chemical Mechanical Polishing (CMP) for Improving Surface Roughness for Semiconductor Material Kind Silicon

Abstract

Chemical Mechanical Polishing (CMP) is the polishing process where the top surface of a wafer is smoothed using a slurry containing abrasive grit as well as reactive chemical agents. The polishing process is partly mechanical and partly chemical. The mechanical element's main advantage is that it is achieved without great effort to manufacture and supplies good-quality general mechanical and electrical properties. In the current study, the invention reckons on the chemical and mechanical properties of the composition particles (abrasive slurry) utilized to polish silicon surfaces traveling through chemical-mechanical polishing (CMP). MINITAB 17 software was used to estimate the influence of the (CMP) input variables on the surface roughness (Ra) of the silicon workpiece. Other process input variables were disk speed (rpm), the dose of abrasive, the grain size of the abrasive, and the type of slurry. In order to get the best response surface roughness, the current findings show that the constant coefficient of determination (R2) is 95.80%. Furthermore, the effects of disk speed (X1), abrasive dose (X2), abrasive grain size (X3), and type of slurry (X4) on achieving a superior surface roughness finish were 21.05%, 4.34%, 50.00%, and 24.59%, respectively.