Effect of oxygen substitution on the optoelectronic properties of the ternary ZnSe1-xOx alloys

Abstract

The fast advance in the semiconductor technology is very promising for optoelectronics devices and their future applications in Visible Light Communications (VLC) Systems. In fact, the following alloys In1-xAlxN, GaN1-xAsx, and ZnSe1-xOx are high efficient semiconductors for both solid-state lighting and solar cells. The work presented in this paper demonstrates the performance of the ternary system ZnSe1-xOx and binary relative (ZnSe and ZnO) as solid-state lighting. Theirs electronic and optical properties are discussed. The main functional parameters depending on the oxygen concentration are given such as: the band gap, the index of refraction, the dielectric function, the absorption coefficient, the network parameter, and the bulk modulus. Calculations are carried out by deploying the Ab-initio method approaches based on the density functional theory (DFT) within the local density approximation (LDA) and the generalized gradients approximation (GGA) using the Wien2K software package and the FP-LAPW method. The results obtained in this work corroborate those of the experimental results presented in the literature.