Abstract
In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O 2 gas flow was carefully controlled by different oxygen concentration to obtain proper Ga 2 O 3 film. It was demonstrated that the performance of the devices was improved by optimizing oxygen vacancy through deposition condition. Consequently, the sample with 25% of oxygen concentration exhibited the outstanding electrical properties with maximum cycles of 220, an I on /I off ratio of 5 × 10 4 , retention time of 10 4 s, high resistance state /low resistance state ratio of 7 × 10 5 under 0.1V read voltage.
Highlights
Resistive memory has a simple metal/insulator/metal (MIM) structure, which comprises an insulator between two metal electrodes
When the voltage is larger than the threshold voltage, the device is switched to the low-resistance state
When the present current is larger than the past compliance current, the device is switched to the high-resistance state
Summary
Resistive memory has a simple metal/insulator/metal (MIM) structure, which comprises an insulator between two metal electrodes. Resistive memory has many advantages, such as high density, low cost, low power consumption, long memory capacity, and high endurance, and can write information faster than NAND Flash by approximately 10,000 times. In this regard, resistive memory can be applied to many products, such as the Internet of Things, wearable equipment, consumer electronics, enterprise storage, and RFID products [2], [3]. We used Ga2O3 as insulator in in RRAM because of its inherent high resistance properties and very sensitive conductivity to oxygen. The deposition of Ga2O3 films was conducted under different oxygen concentrations. Examining the structure of different oxygen contents confirmed that the conduction mechanism is related to oxygen vacancy
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