Abstract
We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH4/H2 and N2 gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.
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