Abstract
The role of NaF treatment in the production of SnS thin films and solar cells was investigated. The grain size of SnS films containing Na was large (about 500nm) compared to that of SnS films prepared by conventional sulfurization (typically 250nm). The carrier concentration of SnS increased from 5×1016 to 2×1017cm−3 by Na diffusion into the SnS film, and Na acted as an acceptor. Moreover, the NaF layer exhibited a capping effect during high-temperature sulfurization at 500°C and suppressed the re-evaporation of SnS. The short-current density tended to increase from 1.1 to 8.8mA/cm2 with increasing thickness of the deposited NaF layer from 0 to 200nm, because of the larger grain size and carrier concentration of SnS.
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