Abstract
TiNx films with different nitrogen contents were fabricated using direct current reactive magnetron sputtering. Influence of N2 flow rate on the resistivity and electromagnetic interference (EMI) shielding effectiveness (SE) of TiNx films was studied. The EMI SE of TiNx films was found to be related with the resistivity. With the rise of N2 flow rate, the resistivity of TiNx films increased, while the EMI SE decreased. When the N2 flow rate was 1 sccm, the EMI SE of TiNx films was over 20 dB with the thickness of 1.47 µm, which was much smaller than the thickness of the presently known EMI-shielding materials. The results indicated that TiNx films could be applied as ultrathin thickness, lightweight, and design flexibility shielding materials.
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