Abstract
Diamond/boron/MoS2/diamond composite film electroluminescence (EL) devices with different MoS2 thickness were fabricated on p-type heavy doped silicon substrates. Its composition, microstructure and EL characteristics were tested and discussed. The experimental results show that the EL spectrum of the device has two luminous peaks in the visible region, which is located in the green region and the red region respectively. As the thickness of MoS2 increased from 10 nm to 80 nm, the peak of red luminescence shifted from 676 nm to 704 nm, and the breakdown voltage of an EL device gradually decreased from 420 V to 140 V, meanwhile the EL intensity first increases and then decreases. When thickness of MoS2 is 30 nm, the brightness of the EL device reaches the maximum.
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