Abstract

Photoluminescence measurements on individual CdSe / ZnSe / ZnMnSe quantum dots in a magnetic field up to 11 T both parallel and perpendicular to the sample growth plane at 1.6 K reveal a qualitative difference between samples with different strength of the sp-d exchange interaction controlled by means of varying the thickness of the nonmagnetic ZnSe layer. The observed difference is related with the dependence of the non-radiative Mn assisted recombination and the spin relaxation on magnetic field and the strength of the exchange interaction.

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