Effect of manganese doping of BaSrTiO3 on diffusion and domain wall pinning

Abstract

In the present paper, the influence of manganese doping on the dielectric properties of BaSrTiO3 thin films is presented. The real and imaginary parts of the material's permittivity have been measured in a large frequency range (100 Hz–1 MHz) and as a function of the electric field. The tunability and the figure of merit of the material have been obtained from the measurement of the permittivity under an applied DC bias electric field. For the undoped material, the dielectric losses become important for a large DC bias which leads to breakdown. At a suitable dopant rate, this effect disappears. In order to better understand the origin of the related phenomena, we measure the permittivity as a function of the AC excitation amplitude and we decompose the obtained permittivity with the hyperbolic law. This enables to extract the different contributions of the bulk (low frequency diffusion and high frequency lattice relaxation) and of the domain wall motions (vibration and pinning/unpinning) to the material's dielectric permittivity and to understand the effect of manganese doping on each contribution. Knowledge of the related mechanisms allows us to establish the optimum dopant rate (mainly conditioned by the lattice contribution) and to reduce the domain wall motion, which finally is beneficial for the desired properties of the ferroelectric thin film. A particular attention is paid to low frequency diffusion, an especially harmful effect when a DC biasing is mandatory (tunable electronic component in mobile telecommunication devices for example).